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 BAT63-07WE6811
Silicon Schottky Diode Low barrie diode for detectors up to GHz frequencies For high-speed switching applications Zero bias detector diode

BAT63-07W
4 3
D1
D2
1
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BAT63-07WE6811
Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1)
1For
Package SOT343
Configuration parallel pair
LS (nH) Marking 1.6 63s
Symbol VR IF Ptot Tj Tstg Symbol
RthJS
Value 8 100 100 150 -55 ... 150
Unit V mA mW C
calculation of RthJA please refer to Application Note Thermal Resistance
1
TS
103 C
Value 470
Unit K/W
Jul-24-2002
BAT63-07WE6811
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Reverse voltage
IR = 100 A VR VF
Symbol min. 8 -
Values typ. 10 190 max. 300
Unit
V mV
Forward voltage
IF = 1 mA
AC Characteristics Diode capacitance
VR = 0.2 V, f = 1 MHz CT R0
-
0.65 30
0.85 -
pF
k
Differential resistance
VR = 0 V, f = 10 kHz
2
Jul-24-2002
BAT63-07WE6811
Diode capacitance CT =
f = 1MHz
1
pF A
TA = Parameter
10 -1
0.8 0.7 10 -2
CT
0.6 0.5 0.4
IF
10 -3 0.3 0.2 0.1 0 0
V
TA=125C TA=85C TA=25C TA=-40C
0.5
1
1.5
2
3
10 -4 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VR
120
10 3
mA mA
80
RthJS
IF
60
10 2
40
D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
20
0 0
15
30
45
60
75
90 105 120 C
150
10 1 -6 10
10
-5
10
-4
10
-3
10
-2
TS
3
Jul-24-2002
Forward current IF =
(TS )
Permissible Puls Load RthJS =
(VR )
Forward current IF =
(VF)
V
1
VF
(tp )
C
10
0
tp
BAT63-07WE6811
Permissible Pulse Load
10 1
IFmax/IFDC
mA
10 0 -6 10
10
RL = Parameter
10 3 mV 10 2
Vout
10 1
10 0
10 -1
10 -2
10 -3 -1 10
10
0
10
Rectifier voltage Vout =
-5
IFmax / IFDC =
(tp )
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10
-4
10
-3
10
-2
C
10
0
tp
(Vin )
Testcircuit
D.U.T V R IN
50
I
C
1nF
L
R
L
V0
RL=500k 200k 100k 50k 20k
1
10
2
mV 10
3
Vin
4
Jul-24-2002


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