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BAT63-07WE6811 Silicon Schottky Diode Low barrie diode for detectors up to GHz frequencies For high-speed switching applications Zero bias detector diode BAT63-07W 4 3 D1 D2 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT63-07WE6811 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) 1For Package SOT343 Configuration parallel pair LS (nH) Marking 1.6 63s Symbol VR IF Ptot Tj Tstg Symbol RthJS Value 8 100 100 150 -55 ... 150 Unit V mA mW C calculation of RthJA please refer to Application Note Thermal Resistance 1 TS 103 C Value 470 Unit K/W Jul-24-2002 BAT63-07WE6811 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Reverse voltage IR = 100 A VR VF Symbol min. 8 - Values typ. 10 190 max. 300 Unit V mV Forward voltage IF = 1 mA AC Characteristics Diode capacitance VR = 0.2 V, f = 1 MHz CT R0 - 0.65 30 0.85 - pF k Differential resistance VR = 0 V, f = 10 kHz 2 Jul-24-2002 BAT63-07WE6811 Diode capacitance CT = f = 1MHz 1 pF A TA = Parameter 10 -1 0.8 0.7 10 -2 CT 0.6 0.5 0.4 IF 10 -3 0.3 0.2 0.1 0 0 V TA=125C TA=85C TA=25C TA=-40C 0.5 1 1.5 2 3 10 -4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VR 120 10 3 mA mA 80 RthJS IF 60 10 2 40 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 20 0 0 15 30 45 60 75 90 105 120 C 150 10 1 -6 10 10 -5 10 -4 10 -3 10 -2 TS 3 Jul-24-2002 Forward current IF = (TS ) Permissible Puls Load RthJS = (VR ) Forward current IF = (VF) V 1 VF (tp ) C 10 0 tp BAT63-07WE6811 Permissible Pulse Load 10 1 IFmax/IFDC mA 10 0 -6 10 10 RL = Parameter 10 3 mV 10 2 Vout 10 1 10 0 10 -1 10 -2 10 -3 -1 10 10 0 10 Rectifier voltage Vout = -5 IFmax / IFDC = (tp ) D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -4 10 -3 10 -2 C 10 0 tp (Vin ) Testcircuit D.U.T V R IN 50 I C 1nF L R L V0 RL=500k 200k 100k 50k 20k 1 10 2 mV 10 3 Vin 4 Jul-24-2002 |
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